Manufacturer Part Number
SIHG24N65E-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
650V MOSFET with low on-resistance
Optimized for high-frequency, high-efficiency switching applications
Suitable for high-voltage, high-power applications such as converters, motor drives, and power supplies
Product Advantages
Excellent power density and efficiency
Reliable and robust design
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 145mΩ @ 12A, 10V
Continuous Drain Current (Id): 24A @ 25°C (Tc)
Input Capacitance (Ciss): 2740pF @ 100V
Power Dissipation (Tc): 250W
Quality and Safety Features
ROHS3 compliant
Designed for high reliability and long-term operation
Compatibility
TO-247AC package
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Power converters
Motor drives
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from Vishay/Siliconix or other manufacturers
Key Reasons to Choose This Product
Excellent power density and efficiency
Reliable and robust design
Wide operating temperature range
Suitable for high-voltage, high-power applications
Optimized for high-frequency, high-efficiency switching