Manufacturer Part Number
SIHG22N60E-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET designed for high-voltage switching and amplifier applications.
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance of 180mOhm
Continuous drain current of 21A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Robust design for high reliability
Product Advantages
Efficient power conversion with low losses
Reliable performance in high-voltage applications
Compact and easy to integrate design
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 180mOhm
Drain Current (Id): 21A
Input Capacitance (Ciss): 1920pF
Power Dissipation (Ptot): 227W
Quality and Safety Features
RoHS3 compliant
TO-247AC package for reliable operation
Robust design for high reliability and long lifespan
Compatibility
Suitable for high-voltage switching and amplifier applications
Can be used in a wide range of power electronics systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Industrial and automotive power electronics
Product Lifecycle
This product is currently in production and actively available.
There are no immediate plans for discontinuation or replacement.
Key Reasons to Choose This Product
High breakdown voltage and low on-resistance for efficient power conversion
Reliable performance in high-voltage applications
Wide operating temperature range for versatile use
Fast switching speed and low gate charge for high-frequency operation
Robust design and RoHS3 compliance for long lifespan and safety
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