SI9926CDY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI9926CDY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Vishay's SI9926CDY-T1-GE3 is a dual N-channel enhancement-mode power MOSFET in a space-saving 8-SOIC package.

Product Features and Performance

20V drain-to-source voltage (Vdss)

18mOhm on-resistance (Rds(on)) at 8.3A and 4.5V

8A continuous drain current (Id) at 25°C

1200pF maximum input capacitance (Ciss) at 10V

33nC maximum gate charge (Qg) at 10V

-55°C to 150°C operating temperature range

Product Advantages

Optimized for high-frequency, high-efficiency switching applications

Suitable for a wide range of power management and control applications

Small 8-SOIC package for space-constrained designs

Key Technical Parameters

MOSFET technology

Trench FET series

Logic level gate

Tape and reel packaging

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Compatible with a wide range of electronic devices and power management systems.

Application Areas

Power supplies

Motor drives

Lighting controls

Industrial automation

Telecommunications equipment

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available from Vishay.

Several Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance and high current rating

Small footprint 8-SOIC package enables compact design

Suitable for a broad range of power management and control applications

Proven reliability and quality from a trusted manufacturer, Vishay Siliconix