SI9926BDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI9926BDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel TrenchFET MOSFET with low on-resistance and logic-level gate drive

Product Features and Performance

Extremely low on-resistance (20 mΩ max)

Rated for 6.2A continuous drain current at 25°C

20V drain-source voltage rating

Operates over a wide temperature range (-55°C to 150°C)

Logic-level gate drive (1.5V max gate threshold)

Low gate charge (20 nC max)

High power efficiency and fast switching

Compact 8-SOIC package

Product Advantages

Excellent performance for power management applications

Ideal for load switching, motor control, and other power conversion circuits

Optimized for high-density, high-efficiency power conversion

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 20 mΩ max

Continuous Drain Current (Id): 6.2A

Gate Threshold Voltage (Vgs(th)): 1.5V max

Gate Charge (Qg): 20 nC max

Power Dissipation: 1.14W

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Designed for use in a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Lighting control

Battery management

Industrial automation

Product Lifecycle

Currently in production. No plans for discontinuation or replacement at this time.

Key Reasons to Choose This Product

Excellent power efficiency and low on-resistance for high-performance power management

Logic-level gate drive for easy integration into control circuits

Compact and space-saving 8-SOIC package

Reliable operation over a wide temperature range

RoHS3 compliance for environmentally-conscious design