SI9926CDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI9926CDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel Trench MOSFET with low on-resistance and high-speed switching performance.

Product Features and Performance

Low on-resistance

High-speed switching

Logic-level gate

Wide temperature range operation

Product Advantages

Efficient power conversion

Fast switching

Ease of use with logic-level gate

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

RDS(on) (max): 18mΩ

Continuous Drain Current (ID): 8A

Input Capacitance (Ciss): 1200pF

Gate Charge (Qg): 33nC

Quality and Safety Features

RoHS3 compliant

High reliability and ruggedness

Compatibility

Surface mount package (8-SOIC)

Application Areas

Power management

Motor control

Switching power supplies

Product Lifecycle

Currently in production, no discontinuation planned.

Key Reasons to Choose

Excellent performance-to-cost ratio

High efficiency and fast switching

Reliable and robust design

Easy to integrate into applications