SI8472DB-T2-E1 - Vishay Siliconix

Manufacturer Part Number

SI8472DB-T2-E1

Manufacturer

Vishay / Siliconix

Introduction

Single N-Channel MOSFET with Trench Technology

Product Features and Performance

20V Drain-Source Voltage (Vdss)

±8V Gate-Source Voltage (Vgs)

44mΩ Maximum On-Resistance (Rds(on)) at 1.5A, 4.5V

630pF Maximum Input Capacitance (Ciss) at 10V

780mW Maximum Power Dissipation at 25°C

N-Channel MOSFET with Trench Technology

900mV Maximum Gate Threshold Voltage (Vgs(th)) at 250μA

5V Minimum and 4.5V Maximum Drive Voltage for Rds(on)

18nC Maximum Gate Charge (Qg) at 8V

Product Advantages

Compact 4-MICRO FOOT (1x1) Surface Mount Package

Wide Operating Temperature Range of -55°C to 150°C

Excellent Performance with Low On-Resistance and Capacitance

Trench MOSFET Technology for Improved Efficiency

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 44mΩ @ 1.5A, 4.5V

Input Capacitance (Ciss): 630pF @ 10V

Power Dissipation: 780mW @ 25°C

Gate Threshold Voltage (Vgs(th)): 900mV @ 250μA

Drive Voltage: 1.5V (Min), 4.5V (Max)

Gate Charge (Qg): 18nC @ 8V

Quality and Safety Features

RoHS3 Compliant

Suitable for Reflow Soldering

Compatibility

Suitable for a wide range of electronic applications requiring a high-performance, small-footprint N-Channel MOSFET.

Application Areas

Power Management Circuits

Motor Drives

Switching Power Supplies

Industrial Controls

Automotive Electronics

Product Lifecycle

The SI8472DB-T2-E1 is a current production device and is not nearing discontinuation. Replacement or upgrade options may be available from Vishay/Siliconix or other manufacturers.

Key Reasons to Choose This Product

Excellent Performance with Low On-Resistance and Capacitance

Wide Operating Temperature Range of -55°C to 150°C

Compact 4-MICRO FOOT (1x1) Surface Mount Package

RoHS3 Compliance for Environmental Sustainability

Trench MOSFET Technology for Improved Efficiency

Suitable for a Wide Range of Electronic Applications