SI8499DB-T2-E1 - Vishay Siliconix

Manufacturer Part Number

SI8499DB-T2-E1

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel power MOSFET in a compact 6-Micro Foot (1.5x1) package

Product Features and Performance

Trench MOSFET technology

Low on-resistance of 32mOhm @ 1.5A, 4.5V

Continuous drain current of 16A at 25°C

Operating temperature range of -55°C to 150°C

Low input capacitance of 1300pF @ 10V

Power dissipation of 2.77W at Ta and 13W at Tc

Product Advantages

Compact 6-Micro Foot (1.5x1) package

Low on-resistance for improved efficiency

High current handling capability

Wide operating temperature range

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Gate to Source Voltage (Vgs Max): ±12V

Threshold Voltage (Vgs(th) Max): 1.3V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Gate Charge (Qg Max): 30nC @ 5V

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Surface mount technology

Tape and reel packaging

Application Areas

Power supplies

Motor drives

Lighting and LED drivers

Industrial and consumer electronics

Product Lifecycle

Current product, not nearing discontinuation

Replacement or upgrade options available

Key Reasons to Choose This Product

Excellent performance-to-size ratio

Low on-resistance for improved efficiency

High current handling capability

Wide operating temperature range

Compact and surface mount-friendly package

RoHS3 compliance for environmental responsibility