Manufacturer Part Number
SI8461DB-T2-E1
Manufacturer
Vishay / Siliconix
Introduction
This is a discrete semiconductor product, specifically a single transistor MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).
Product Features and Performance
Trench MOSFET technology
P-channel MOSFET
20V drain-to-source voltage
Maximum gate-to-source voltage of ±8V
On-resistance of 100mOhm @ 1.5A, 4.5V
Continuous drain current of 2.5A at 25°C ambient temperature
Input capacitance of 610pF @ 10V
Maximum power dissipation of 780mW at Ta (ambient temperature) and 1.8W at Tc (case temperature)
Gate charge of 24nC @ 8V
Product Advantages
Trench MOSFET technology provides low on-resistance and high current handling capability
Small 4-Microfoot package suitable for space-constrained applications
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-source voltage (Vdss): 20V
Maximum gate-to-source voltage (Vgs): ±8V
On-resistance (Rds(on)): 100mOhm @ 1.5A, 4.5V
Continuous drain current (Id): 2.5A @ 25°C
Input capacitance (Ciss): 610pF @ 10V
Power dissipation: 780mW (Ta), 1.8W (Tc)
Gate charge (Qg): 24nC @ 8V
Quality and Safety Features
RoHS3 compliant
Wide operating temperature range of -55°C to 150°C
Compatibility
This MOSFET is suitable for use in a variety of electronic circuits and applications.
Application Areas
Power management circuits
Switching applications
Amplifier circuits
Motor control
Battery-powered devices
Product Lifecycle
This product is currently available and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose this Product
Trench MOSFET technology for low on-resistance and high current handling
Small 4-Microfoot package for space-constrained designs
Wide operating temperature range suitable for harsh environments
RoHS3 compliance for use in environmentally-conscious applications
Proven reliability and performance from a reputable manufacturer (Vishay / Siliconix)