SI8457DB-T1-E1 - Vishay Siliconix

Manufacturer Part Number

SI8457DB-T1-E1

Manufacturer

Vishay / Siliconix

Introduction

Single P-Channel MOSFET in a compact 4-MICRO FOOT (1.6x1.6) package

Product Features and Performance

Low on-resistance of 19mOhm @ 3A, 4.5V

Continuous drain current of 6.5A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 2900pF @ 6V

Low gate charge of 93nC @ 8V

Product Advantages

Compact 4-MICRO FOOT (1.6x1.6) package for space-constrained applications

Low on-resistance and high current handling for efficient power management

Wide temperature range for use in diverse environments

Low input capacitance and gate charge for fast switching and energy-efficient operation

Key Technical Parameters

Drain to Source Voltage (Vdss): 12V

Gate-Source Voltage (Vgs Max): ±8V

Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)

Threshold Voltage (Vgs(th) Max): 900mV @ 250A

Quality and Safety Features

RoHS3 compliant

Suitable for Tape & Reel (TR) packaging

Compatibility

Can be used in a variety of applications requiring a P-Channel MOSFET with the specified performance characteristics

Application Areas

Power management

Switching circuits

Motor control

Battery-powered devices

Industrial and consumer electronics

Product Lifecycle

Current product, no discontinuation expected

Replacements and upgrades available from Vishay/Siliconix

Key Reasons to Choose This Product

Compact size for space-constrained designs

Low on-resistance and high current handling for efficient power management

Wide temperature range for use in diverse environments

Low input capacitance and gate charge for fast switching and energy-efficient operation

RoHS3 compliance for use in modern electronic products

Availability in Tape & Reel packaging for automated assembly