SI8429DB-T1-E1 - Vishay Siliconix

Manufacturer Part Number

SI8429DB-T1-E1

Manufacturer

Vishay / Siliconix

Introduction

The SI8429DB-T1-E1 is a discrete semiconductor product, specifically a P-channel MOSFET transistor. It is part of Vishay's TrenchFET series and designed in a 4-XFBGA, CSPBGA package.

Product Features and Performance

8V Drain-to-Source Voltage (Vdss)

±5V Gate-to-Source Voltage (Vgs)

35mΩ On-Resistance (Rds(on)) at 1A, 4.5V

7A Continuous Drain Current (Id) at 25°C

1640pF Input Capacitance (Ciss) at 4V

26nC Gate Charge (Qg) at 5V

77W Power Dissipation at 25°C

-55°C to 150°C Operating Temperature Range

Product Advantages

Low on-resistance for efficient power switching

High current handling capability

Small 4-Microfoot package for compact designs

Suitable for a wide range of operating temperatures

Key Technical Parameters

MOSFET Technology

P-Channel FET Type

800mV Gate Threshold Voltage (Vgs(th)) at 250μA

2V to 4.5V Drive Voltage Range

Quality and Safety Features

RoHS3 Compliant

Tape and Reel Packaging

Compatibility

Surface Mount Mounting Type

Application Areas

Power management

Switching circuits

Amplifiers

Motor control

Industrial and consumer electronics

Product Lifecycle

Current product

Replacements and upgrades may be available

Key Reasons to Choose This Product

Excellent performance-to-size ratio

Efficient power switching capabilities

Wide operating temperature range

Compact 4-Microfoot package

RoHS compliance for environmental responsibility