Manufacturer Part Number
SI8425DB-T1-E1
Manufacturer
Vishay / Siliconix
Introduction
The SI8425DB-T1-E1 is a single P-channel enhancement-mode MOSFET transistor in a compact 4-WLCSP (1.6x1.6) package.
Product Features and Performance
Drain to Source Voltage (Vdss) of 20V
Vgs (Max) of ±10V
Low Rds On of 23mOhm @ 2A, 4.5V
MOSFET (Metal Oxide) technology
Continuous Drain Current (Id) of 5.9A at 25°C
Input Capacitance (Ciss) of 2800 pF @ 10V
Power Dissipation (Max) of 1.1W at Ta, 2.7W at Tc
Gate Charge (Qg) of 110 nC @ 10V
Product Advantages
Compact 4-WLCSP (1.6x1.6) package
Low on-resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Continuous Drain Current (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Wide operating temperature range of -55°C to 150°C
Compatibility
Surface mount package
Suitable for a variety of power switching and control applications
Application Areas
Power management
Motor control
Switch-mode power supplies
Battery management
Industrial and consumer electronics
Product Lifecycle
Current production
No announced discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Compact 4-WLCSP (1.6x1.6) package for space-constrained designs
Low on-resistance for efficient power switching
Wide operating temperature range for diverse applications
RoHS3 compliance for environmental sustainability
Proven reliability and performance from Vishay / Siliconix