Manufacturer Part Number
SI8424CDB-T1-E1
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
8V Drain to Source Voltage
±5V Gate to Source Voltage
20mOhm On-Resistance @ 2A, 4.5V
3A Continuous Drain Current @ 25°C
2340pF Input Capacitance @ 4V
1W Power Dissipation @ 25°C, 2.7W @ Case Temperature
40nC Gate Charge @ 4.5V
Product Advantages
Compact 4-Microfoot package
Wide temperature range of -55°C to 150°C
Low on-resistance for efficient power switching
Suitable for high-frequency and high-density applications
Key Technical Parameters
MOSFET Technology
8V Drain to Source Voltage
±5V Gate to Source Voltage
20mOhm On-Resistance
3A Continuous Drain Current
2340pF Input Capacitance
1W/2.7W Power Dissipation
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
Power switching
Motor control
Battery management
Electronic instrumentation
Industrial automation
Product Lifecycle
Currently available
No discontinuation plans
Replacement/upgrade options may be available
Key Reasons to Choose
Compact package
Wide temperature range
Low on-resistance for efficiency
Suitable for high-frequency/density applications
RoHS3 compliance for environmental responsibility