SI8405DB-T1-E1 - Vishay Siliconix

Manufacturer Part Number

SI8405DB-T1-E1

Manufacturer

Vishay / Siliconix

Introduction

A p-channel enhancement-mode MOSFET with low on-resistance and fast switching characteristics, suitable for use in a wide range of power management and control applications.

Product Features and Performance

Low on-resistance (55 mΩ max at 1 A, 4.5 V)

High current capability (3.6 A continuous drain current at 25°C)

Fast switching speed

Wide operating temperature range (-55°C to 150°C)

Trench technology for improved performance and reliability

Product Advantages

Efficient power management

Reliable operation in demanding applications

Compact size and easy integration

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 12 V

Gate-to-Source Voltage (Vgs): ±8 V

Drain Current (Id): 3.6 A continuous at 25°C

On-Resistance (Rds(on)): 55 mΩ max at 1 A, 4.5 V

Gate Charge (Qg): 21 nC max at 4.5 V

Quality and Safety Features

RoHS3 compliant

Suitable for harsh environments with wide operating temperature range

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Automotive electronics

Industrial control systems

Product Lifecycle

Current production product

No known plans for discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power efficiency and performance

Reliable operation in demanding environments

Easy integration and compact size

Broad compatibility with various applications