SI8409DB-T1-E1 - Vishay Siliconix

Manufacturer Part Number

SI8409DB-T1-E1

Manufacturer

Vishay / Siliconix

Introduction

The SI8409DB-T1-E1 is a P-channel enhancement-mode power MOSFET from Vishay Siliconix. It is part of the TrenchFET series and designed for a wide range of power management and control applications.

Product Features and Performance

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology

P-channel enhancement-mode operation

Drain-to-source voltage (Vdss) of 30V

Maximum gate-to-source voltage (Vgs) of ±12V

Low on-resistance (Rds(on)) of 46mΩ @ 1A, 4.5V

Continuous drain current (Id) of 4.6A at 25°C

Maximum power dissipation of 1.47W at 25°C

Gate charge (Qg) of 26nC @ 4.5V

Operating temperature range of -55°C to 150°C

Product Advantages

Excellent power handling capabilities

Efficient power conversion and control

Reliable performance in a wide temperature range

Compact 4-Microfoot package for space-saving design

Key Technical Parameters

Drain-to-source voltage (Vdss): 30V

Gate-to-source voltage (Vgs): ±12V

On-resistance (Rds(on)): 46mΩ @ 1A, 4.5V

Continuous drain current (Id): 4.6A at 25°C

Power dissipation (Max): 1.47W at 25°C

Gate charge (Qg): 26nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Compact 4-Microfoot package for reliable surface mount assembly

Compatibility

Designed for a wide range of power management and control applications

Application Areas

Power management and control systems

Motor drives

Switching power supplies

Inverters and converters

Automotive electronics

Product Lifecycle

Currently available

No information on discontinuation or replacement

Key Reasons to Choose This Product

Excellent power handling and efficiency

Reliable performance in wide temperature range

Compact package for space-saving design

RoHS3 compliance for environmental sustainability