Manufacturer Part Number
SI7998DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Dual N-Channel MOSFET with low on-resistance in a PowerPAK SO-8 dual package.
Product Features and Performance
2 N-Channel MOSFET devices in a single package
Low on-resistance (RDS(on) of 9.3mΩ @ 15A, 10V)
High current capability (30A continuous drain current)
Low gate charge (26nC @ 10V)
Logic level gate (2.5V threshold)
Wide operating temperature range (-55°C to 150°C)
Power dissipation up to 22W per device, 40W total
Product Advantages
Compact dual package design saves board space
High efficiency and low power loss
Suitable for high current, high power density applications
Logic level gate simplifies drive circuit design
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Continuous Drain Current (ID): 25A, 30A
On-Resistance (RDS(on)): 9.3mΩ @ 15A, 10V
Input Capacitance (Ciss): 1100pF @ 15V
Gate Threshold Voltage (Vgs(th)): 2.5V @ 250μA
Quality and Safety Features
RoHS3 compliant
PowerPAK SO-8 Dual package provides improved thermal performance and reliability
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and applications requiring high-current, high-power switching.
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
Telecommunications equipment
Product Lifecycle
This product is actively supported by Vishay/Siliconix and is not nearing discontinuation. Replacement or upgraded options may be available in the future.
Key Reasons to Choose This Product
Excellent power efficiency and low power loss
Compact dual package design saves board space
High current and power handling capability
Logic level gate simplifies drive circuit design
Wide operating temperature range and reliable performance
RoHS3 compliant for use in modern electronic systems
SI7970DP-T1-E3Electro-Films (EFI) / Vishay