SI7994DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7994DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance dual N-channel TrenchFET MOSFET

Product Features and Performance

Dual N-channel design

Low on-resistance for high efficiency

Fast switching speed

Rugged and reliable

Suitable for high-current, high-frequency applications

Product Advantages

Improved energy efficiency

Reduced power dissipation

Compact and space-saving design

Reliable performance in harsh environments

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-resistance (Rds(on)): 5.6mOhm @ 20A, 10V

Continuous Drain Current (Id): 60A @ 25°C

Input Capacitance (Ciss): 3500pF @ 15V

Gate Threshold Voltage (Vgs(th)): 3V @ 250A

Gate Charge (Qg): 80nC @ 10V

Operating Temperature: -55°C to 150°C

Quality and Safety Features

ROHS3 compliant

Stringent quality control and testing

Compatibility

Suitable for a wide range of high-power and high-frequency applications

Application Areas

Power supplies

Servo drives

Motor controls

Industrial equipment

Automotive electronics

Product Lifecycle

Currently available with no indication of discontinuation

Replacement or upgrade options may be available from Vishay

Key Reasons to Choose This Product

Excellent efficiency and thermal performance

Reliable and rugged design

Compact and space-saving package

Suitable for a wide range of high-power applications

Backed by Vishay's reputation for quality and innovation