Manufacturer Part Number
SI7960DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
A dual n-channel MOSFET in a PowerPAK SO-8 package, part of the TrenchFET series.
Product Features and Performance
60V drain-to-source voltage
21mOhm maximum on-resistance at 9.7A, 10V
2A continuous drain current at 25°C
Logic level gate with 3V threshold voltage
75nC maximum gate charge at 10V
Operating temperature range of -55°C to 150°C
4W maximum power dissipation
Product Advantages
Compact dual MOSFET package
Low on-resistance for efficient power switching
Logic level gate for easy drive
Wide temperature range for versatile applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
On-Resistance (Rdson): 21mOhm
Drain Current (Id): 6.2A
Gate Threshold Voltage (Vgs(th)): 3V
Gate Charge (Qg): 75nC
Power Dissipation: 1.4W
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 automotive standard
Compatibility
Suitable for use in power switching and control applications
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
This product is an active and available part.
Replacement or upgrade options may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Compact dual MOSFET package for space-constrained designs
Low on-resistance for efficient power switching
Logic level gate for easy microcontroller interfacing
Wide temperature range for use in demanding environments
Automotive-qualified for reliable performance
SI7962DP-T1-GE3Electro-Films (EFI) / Vishay