Manufacturer Part Number
SI7958DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI7958DP-T1-E3 is a dual N-channel MOSFET in a PowerPAK SO-8 Dual package, part of Vishay's TrenchFET series.
Product Features and Performance
40V Drain-to-Source Voltage (Vdss)
5mΩ Maximum On-Resistance (Rds(on)) at 11.3A and 10V
2A Continuous Drain Current (Id) at 25°C
Logic Level Gate with 3V Maximum Gate Threshold Voltage (Vgs(th)) at 250μA
75nC Maximum Gate Charge (Qg) at 10V
Wide Operating Temperature Range: -55°C to 150°C (TJ)
4W Power Dissipation (Max)
Product Advantages
High efficiency and low power loss
Compact PowerPAK SO-8 Dual package
Logic level gate for easy driving
Wide temperature range capability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 16.5mΩ max
Continuous Drain Current (Id): 7.2A
Gate Threshold Voltage (Vgs(th)): 3V max
Gate Charge (Qg): 75nC max
Power Dissipation: 1.4W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of electronic systems and circuits that require high-performance, logic-level N-channel MOSFETs.
Application Areas
Switch mode power supplies
Motor drives
Battery management systems
Industrial and consumer electronics
Product Lifecycle
The SI7958DP-T1-E3 is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from Vishay or other MOSFET manufacturers.
Key Reasons to Choose This Product
Excellent efficiency and low power loss due to low on-resistance
Compact and space-saving PowerPAK SO-8 Dual package
Wide operating temperature range for versatile applications
Logic level gate for easy driving and integration
RoHS3 compliance for use in environmentally-friendly designs
SI7948DP-T1-E3Electro-Films (EFI) / Vishay