Manufacturer Part Number
SI7956DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-Performance Dual N-Channel TrenchFET MOSFET
Product Features and Performance
Dual N-Channel MOSFET
150V Drain-Source Voltage
105mΩ Maximum On-Resistance
6A Continuous Drain Current
Logic Level Gate
Surface Mount Packaging
Product Advantages
High Power Density
Low On-Resistance
Reliable Trench MOSFET Technology
Logic Level Gate for Easy Control
Key Technical Parameters
Drain-Source Voltage (Vdss): 150V
On-Resistance (Rds(on)): 105mΩ @ 4.1A, 10V
Continuous Drain Current (Id): 2.6A
Gate-Source Threshold Voltage (Vgs(th)): 4V @ 250μA
Gate Charge (Qg): 26nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Reliable PowerPAK SO-8 Dual Packaging
Compatibility
Compatible with a wide range of electronic devices and circuits requiring high-performance, dual N-Channel MOSFET functionality.
Application Areas
Power Supplies
Motor Drives
Amplifiers
Switching Circuits
Industrial Controls
Product Lifecycle
This product is currently in production and available for purchase. Vishay/Siliconix continues to offer support and potential upgrades or replacements as needed.
Key Reasons to Choose This Product
High power density and efficiency due to low on-resistance
Reliable Trench MOSFET technology for long-term performance
Logic level gate for easy integration and control
Compact, surface-mount PowerPAK SO-8 Dual packaging
RoHS3 compliance for use in a wide range of applications