Manufacturer Part Number
SI7884BDP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
40V Drain to Source Voltage
58A Continuous Drain Current
5mOhm Maximum On-Resistance
-55°C to 150°C Operating Temperature Range
3540pF Input Capacitance
6W Power Dissipation (Ta), 46W Power Dissipation (Tc)
77nC Gate Charge
Product Advantages
High efficiency and low power loss
Fast switching speed
Wide temperature range
Compact and space-saving design
Key Technical Parameters
Drain to Source Voltage: 40V
Gate to Source Voltage: ±20V
On-Resistance: 7.5mOhm
Continuous Drain Current: 58A
Input Capacitance: 3540pF
Power Dissipation: 4.6W (Ta), 46W (Tc)
Quality and Safety Features
RoHS3 Compliant
Reliable and durable construction
Compatibility
Compatible with various electronic applications
Application Areas
Power supplies
Motor drives
Voltage regulators
Switching circuits
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose
High performance and efficiency
Wide operating temperature range
Compact and space-saving design
Reliable and durable construction
RoHS3 compliance