Manufacturer Part Number
SI7884BDP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
ROHS3 Compliant
PowerPAK SO-8 package
TrenchFET series
N-Channel MOSFET
Operating temperature range: -55°C to 150°C
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs) Max: ±20V
On-State Resistance (Rds(on)) Max: 7.5mΩ @ 16A, 10V
Continuous Drain Current (Id) at 25°C: 58A
Input Capacitance (Ciss) Max: 3540pF @ 20V
Power Dissipation Max: 4.6W (Ta), 46W (Tc)
Gate Charge (Qg) Max: 77nC @ 10V
Product Advantages
Low on-state resistance for efficient power conversion
High power handling capability
Suitable for high-frequency, high-power switching applications
Key Technical Parameters
MOSFET technology
N-Channel type
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs) Max: ±20V
On-State Resistance (Rds(on)) Max: 7.5mΩ
Continuous Drain Current (Id) at 25°C: 58A
Input Capacitance (Ciss) Max: 3540pF
Power Dissipation Max: 4.6W (Ta), 46W (Tc)
Gate Charge (Qg) Max: 77nC
Quality and Safety Features
ROHS3 compliant
Suitable for high-temperature applications up to 150°C
Compatibility
Surface mount (PowerPAK SO-8 package)
Suitable for high-frequency, high-power switching applications
Application Areas
Power supplies
Inverters
Motor drives
Switching regulators
Industrial and consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
Low on-state resistance for efficient power conversion
High power handling capability up to 58A
Suitable for high-frequency, high-power switching applications
Wide operating temperature range of -55°C to 150°C
ROHS3 compliant for environmental compatibility
SI7884DP-T1-GE3Electro-Films (EFI) / Vishay