Manufacturer Part Number
SI7882DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance MOSFET transistor for power management applications
Product Features and Performance
N-channel MOSFET
Low on-resistance (RDS(on)) of 5.5 mΩ
High drain current (ID) of 13 A
Wide operating temperature range of -55°C to 150°C
Fast switching speed
Low gate charge (Qg) of 30 nC
Product Advantages
Excellent power efficiency
Compact and space-saving design
Reliable and robust performance
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 12 V
Gate-to-Source Voltage (VGS): ±8 V
Power Dissipation (PD): 1.9 W
Quality and Safety Features
RoHS3 compliant
ESD protection
Overcurrent and overtemperature protection
Compatibility
Compatible with various power management circuits and systems
Application Areas
Power supplies
Motor drives
Battery chargers
Industrial electronics
Automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Exceptional power efficiency and performance
Compact and space-saving design
Reliable and robust operation across a wide temperature range
Suitable for a variety of power management applications
Compliance with RoHS3 standards for environmental sustainability
SI7884DP-T1-GE3Electro-Films (EFI) / Vishay