Manufacturer Part Number
SI7846DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET in PowerPAK SO-8 package
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 150V
Low on-resistance (Rdson) of 50mΩ @ 5A, 10V
Continuous Drain Current (Id) of 4A at 25°C
Power Dissipation (Pd) of 1.9W at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching and low gate charge for efficient power conversion
Product Advantages
Compact PowerPAK SO-8 package for space-saving designs
Low on-resistance for high efficiency
High voltage handling capability
Suitable for a wide range of power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rdson): 50mΩ @ 5A, 10V
Continuous Drain Current (Id): 4A at 25°C
Power Dissipation (Pd): 1.9W at 25°C
Gate Charge (Qg): 36nC @ 10V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Reliable performance in harsh environments
Compatibility
Compatible with a wide range of power conversion circuits and applications
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation
Replacement or upgrade options may be available from Vishay/Siliconix
Key Reasons to Choose This Product
Excellent power efficiency with low on-resistance
High voltage and current handling capability
Compact and space-saving PowerPAK SO-8 package
Reliable performance across wide temperature range
Suitable for a variety of power conversion applications
SI7846DPElectro-Films (EFI) / Vishay