Manufacturer Part Number
SI7844DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Dual N-Channel MOSFET in a PowerPAK SO-8 package
Product Features and Performance
30V Drain-Source Voltage
22mΩ maximum On-Resistance
4A Continuous Drain Current
Logic Level Gate
Low Gate Charge
Product Advantages
Compact dual package design
High power density
Improved thermal performance
Efficient switching
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 22mΩ
Continuous Drain Current (Id): 6.4A
Gate Threshold Voltage (Vgs(th)): 2.4V
Gate Charge (Qg): 20nC
Quality and Safety Features
RoHS3 compliant
Reliable PowerPAK SO-8 package
Compatibility
Compatible with various electronic circuits and systems requiring dual N-Channel MOSFET
Application Areas
Power management
Motor control
Switching circuits
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
Compact dual package design for space-constrained applications
Low on-resistance for efficient power conversion
High current capability for demanding applications
Logic level gate for easy interfacing
Reliable PowerPAK SO-8 package
SI7842DP-T1Electro-Films (EFI) / Vishay