Manufacturer Part Number
SI7842DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
ROHS3 Compliant
PowerPAK SO-8 Dual packaging
-55°C to 150°C operating temperature
4W maximum power
Dual N-Channel MOSFET configuration
30V drain-to-source voltage
22mOhm maximum on-resistance
3A continuous drain current at 25°C
Logic level gate with 2.4V threshold voltage
20nC maximum gate charge at 10V
Product Advantages
Compact and efficient dual MOSFET design
Suitable for high-power, high-current applications
Excellent thermal performance and reliability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 22mOhm
Continuous Drain Current (Id): 6.3A
Gate Threshold Voltage (Vgs(th)): 2.4V
Gate Charge (Qg): 20nC
Quality and Safety Features
RoHS3 compliant
Designed for reliable high-temperature operation
Compatibility
Surface mount package
Compatible with a wide range of electronic circuit designs
Application Areas
Power management
Motor control
Industrial and consumer electronics
Product Lifecycle
Current product
Replacement or upgrade options available
Key Reasons to Choose This Product
Compact and efficient dual MOSFET design
Excellent thermal performance and reliability
Suitable for high-power, high-current applications
Wide operating temperature range
RoHS3 compliance for environmental safety