SI7214DN-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7214DN-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Arrays

Product Features and Performance

RoHS3 Compliant

PowerPAK 1212-8 Dual Packaging

TrenchFET Series

Tape & Reel (TR) Packaging

Operating Temperature: -55°C ~ 150°C (TJ)

Power Rating: 1.3W

2 N-Channel (Dual) Configuration

Drain to Source Voltage (Vdss): 30V

On-Resistance (Rds On Max): 40mOhm @ 6.4A, 10V

MOSFET (Metal Oxide) Technology

Continuous Drain Current (Id) @ 25°C: 4.6A

Logic Level Gate FET Feature

Gate Threshold Voltage (Vgs(th) Max): 3V @ 250A

Gate Charge (Qg Max): 6.5nC @ 4.5V

Surface Mount Mounting Type

Product Advantages

High-performance dual N-channel MOSFET in a compact PowerPAK 1212-8 package

Optimized for low on-resistance and low gate charge

Suitable for a wide range of power conversion and control applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-Resistance (Rds On Max): 40mOhm

Continuous Drain Current (Id) @ 25°C: 4.6A

Gate Threshold Voltage (Vgs(th) Max): 3V

Gate Charge (Qg Max): 6.5nC

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for a wide range of power conversion and control applications

Application Areas

Power conversion

Motor control

Switching power supplies

Voltage regulation

Product Lifecycle

Current product, no plans for discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High performance dual N-channel MOSFET in a compact package

Optimized for low on-resistance and low gate charge

Suitable for a wide range of power conversion and control applications

RoHS3 compliant

Proven reliability and quality from Vishay/Siliconix