SI7212DN-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7212DN-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistor FET, MOSFET Array

Product Features and Performance

MOSFET (Metal Oxide) technology

2 N-Channel (Dual) configuration

Logic Level Gate FET feature

Drain to Source Voltage (Vdss) of 30V

Rds On (Max) of 36mOhm @ 6.8A, 10V

Continuous Drain (Id) of 4.9A @ 25°C

Vgs(th) (Max) of 1.6V @ 250A

Gate Charge (Qg) (Max) of 11nC @ 4.5V

Power rating of 1.3W

Operating Temperature range of -55°C to 150°C (TJ)

Product Advantages

Compact PowerPAK 1212-8 Dual package

RoHS3 compliant

Surface mount design

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V

Current Continuous Drain (Id) @ 25°C: 4.9A

Vgs(th) (Max) @ Id: 1.6V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V

Power Max: 1.3W

Operating Temperature: -55°C ~ 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount design

Application Areas

Suitable for a variety of applications requiring discrete semiconductor devices

Product Lifecycle

Current product, no indication of discontinuation

Several Key Reasons to Choose This Product

Compact and efficient PowerPAK 1212-8 Dual package

Wide operating temperature range of -55°C to 150°C

High power rating of 1.3W

RoHS3 compliant for environmentally-friendly use

Surface mount design for easy integration into various applications