SI7212DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7212DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel MOSFET with Low RDS(on) in PowerPAK 1212-8 Dual Package

Product Features and Performance

30V Drain-to-Source Voltage

36mΩ Maximum On-Resistance at 6.8A, 10V

9A Continuous Drain Current at 25°C

6V Maximum Gate Threshold Voltage at 250μA

11nC Maximum Gate Charge at 4.5V

Logic Level Gate

Operating Temperature Range: -55°C to 150°C

Product Advantages

Excellent thermal performance in a small package

High power density

Ideal for power management applications

Key Technical Parameters

Drain-to-Source Voltage: 30V

On-Resistance: 36mΩ

Continuous Drain Current: 4.9A

Gate Threshold Voltage: 1.6V

Gate Charge: 11nC

Package: PowerPAK 1212-8 Dual

Quality and Safety Features

RoHS3 compliant

Meets environmental and safety standards

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Switching circuits

Battery management systems

Product Lifecycle

Current product

Ongoing availability and support

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Compact and space-saving package

Suitable for a wide range of power electronics applications

Reliable and RoHS-compliant design

Long-term product availability and support