Manufacturer Part Number
SI7186DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel Trench MOSFET Transistor
Product Features and Performance
High-performance MOSFET with low on-resistance
Designed for high-current, high-voltage switching applications
Optimized for low gate charge and fast switching speeds
Suitable for various power conversion and control applications
Product Advantages
Excellent energy efficiency due to low on-resistance
Fast switching capability for high-frequency operation
High power density and compact design
Key Technical Parameters
Drain to Source Voltage (Vdss): 80 V
Maximum Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 12.5 mΩ @ 10 A, 10 V
Continuous Drain Current (Id): 32 A @ 25°C
Input Capacitance (Ciss): 2840 pF @ 40 V
Power Dissipation: 5.2 W @ Ta, 64 W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various power conversion and control circuits
Can be used as a replacement for similar MOSFET transistors
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Inverters
DC/DC converters
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent energy efficiency and low power loss due to low on-resistance
Fast switching capability for high-frequency operation
Compact and space-saving design
Suitable for a wide range of high-power, high-voltage applications
Proven reliability and RoHS compliance