Manufacturer Part Number
SI7172DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
Low on-resistance
High current capability
Wide operating temperature range of -55°C to 150°C
High voltage rating of 200V
Low input capacitance of 2250pF
Power dissipation up to 96W
Product Advantages
High efficiency and low power loss
Suitable for high-power applications
Reliable and durable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 200V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Current Continuous Drain (Id) @ 25°C: 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Quality and Safety Features
ROHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for use in a wide range of electronic devices and power electronic systems
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Telecommunication equipment
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
High current and voltage handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Reliable and durable performance
Suitable for a variety of high-power applications
SI7174DPElectro-Films (EFI) / Vishay