SI7190DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7190DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

High Voltage Operation up to 250V

Low On-Resistance (RDS(ON)) of 118mOhm

Continuous Drain Current (ID) of 18.4A at 25°C

Wide Operating Temperature Range of -55°C to 150°C

Low Gate Charge (Qg) of 72nC at 10V

High Input Capacitance (Ciss) of 2214pF at 125V

High Power Dissipation of 5.4W at Ta and 96W at Tc

Product Advantages

Efficient power conversion

Reliable high voltage operation

Compact surface mount package

Suitable for a wide range of applications

Key Technical Parameters

Drain to Source Voltage (VDS): 250V

Gate to Source Voltage (VGS): ±20V

Threshold Voltage (VGS(th)): 4V at 250A

Drive Voltage: 6V (max RDS(ON)), 10V (min RDS(ON))

Quality and Safety Features

RoHS3 Compliant

Tape and Reel packaging

Compatibility

Suitable for use in various power management and control circuits

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High voltage capability

Low on-resistance for efficient power conversion

Wide operating temperature range

Compact surface mount package

Reliable and RoHS compliant