SI4966DY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4966DY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel MOSFET in 8-SOIC package

Product Features and Performance

2 N-Channel MOSFET in a single package

Drain-Source Voltage (Vdss) of 20V

On-Resistance (Rds(on)) of 25mΩ @ 7.1A, 4.5V

Logic Level Gate with Vgs(th) of 1.5V @ 250µA

Gate Charge (Qg) of 50nC @ 4.5V

Operating Temperature range of -55°C to 150°C

Power Rating of 2W

Product Advantages

Compact 8-SOIC package

Low on-resistance for efficient power switching

Logic level gate for easy interfacing with control circuits

Wide operating temperature range

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 25mΩ @ 7.1A, 4.5V

Gate Threshold Voltage (Vgs(th)): 1.5V @ 250µA

Gate Charge (Qg): 50nC @ 4.5V

Operating Temperature Range: -55°C to 150°C

Power Rating: 2W

Quality and Safety Features

RoHS3 Compliant

Suitable for harsh environments and high-reliability applications

Compatibility

Compatible with various control circuits and power systems

Application Areas

Power management

Motor control

Lighting

Industrial automation

Automotive electronics

Product Lifecycle

Current product, no indication of discontinuation

Replacement or upgrade options available from Vishay

Key Reasons to Choose This Product

Compact 8-SOIC package for space-constrained designs

Low on-resistance for efficient power switching

Logic level gate for easy interface with control circuits

Wide operating temperature range for use in harsh environments

RoHS3 compliance for environmental sustainability