SI4965DY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4965DY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

High-performance, logic-level, p-channel TrenchFET MOSFET in a compact 8-SOIC package.

Product Features and Performance

2 P-Channel MOSFET devices in a single package

Low on-resistance: 21mΩ max. @ 8A, 4.5V

Logic-level gate drive: 4.5V gate-source voltage

Compact 8-SOIC surface-mount package

Wide operating temperature range: -55°C to 150°C

2W power dissipation capability

Product Advantages

Efficient power management

Compact design

Reliable performance across a wide temperature range

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 8V

On-Resistance (Rds(on)): 21mΩ max. @ 8A, 4.5V

Gate-to-Source Threshold Voltage (Vgs(th)): 450mV max. @ 250μA

Gate Charge (Qg): 55nC max. @ 4.5V

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

This MOSFET is suitable for a wide range of power management and switching applications.

Application Areas

Power supplies

Motor drives

Switching circuits

Telecommunication equipment

Industrial automation

Product Lifecycle

The SI4965DY-T1-E3 is an active product, and there are no immediate plans for discontinuation. Replacement or upgrade options may be available from Vishay/Siliconix.

Key Reasons to Choose This Product

Excellent power efficiency with low on-resistance

Compact and space-saving 8-SOIC package

Reliable performance across a wide temperature range

Suitable for a variety of power management and switching applications

RoHS3 compliance for environmental responsibility