Manufacturer Part Number
SI4972DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance dual N-channel TrenchFET MOSFET with low on-resistance and high current capability.
Product Features and Performance
Dual N-channel MOSFET design
Low on-resistance (RDS(on)) of 14.5 mΩ
High continuous drain current (ID) of 10.8 A
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 1080 pF
Low gate charge (Qg) of 28 nC
Product Advantages
Efficient power management
Compact design
Reliable performance
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30 V
Threshold Voltage (VGS(th)): 3 V
On-Resistance (RDS(on)): 14.5 mΩ
Continuous Drain Current (ID): 10.8 A
Input Capacitance (Ciss): 1080 pF
Gate Charge (Qg): 28 nC
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Suitable for a wide range of electronic devices and circuits
Application Areas
Power management
Motor control
Switching power supplies
Automotive electronics
Industrial equipment
Product Lifecycle
Currently available
No indication of discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent performance with low on-resistance and high current capability
Compact and efficient design
Wide operating temperature range
Reliable and RoHS3 compliant
Suitable for a variety of applications