SI4933DY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4933DY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

The SI4933DY-T1-E3 is a dual P-channel TrenchFET MOSFET from Vishay/Siliconix, a leading manufacturer of discrete semiconductor products.

Product Features and Performance

Dual P-channel MOSFET design

Trench technology for high performance

Low on-resistance (14mΩ max @ 9.8A, 4.5V)

High continuous drain current (7.4A @ 25°C)

Logic level gate (1V threshold voltage max)

Low gate charge (70nC max @ 4.5V)

Wide operating temperature range (-55°C to 150°C)

1W maximum power dissipation

Product Advantages

Efficient power management due to low on-resistance

Versatile design suitable for a wide range of applications

Reliable performance over a wide temperature range

Small footprint and easy surface mount integration

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 12V

On-Resistance (Rds(on)): 14mΩ max @ 9.8A, 4.5V

Continuous Drain Current (Id): 7.4A @ 25°C

Gate Threshold Voltage (Vgs(th)): 1V max @ 500μA

Gate Charge (Qg): 70nC max @ 4.5V

Quality and Safety Features

RoHS3 compliant

Vishay/Siliconix's renowned quality and reliability

Compatibility

Suitable for a wide range of electronic applications requiring dual P-channel MOSFET functionality

Application Areas

Power management circuits

Switching circuits

Motor control applications

Electronic loads

Product Lifecycle

The SI4933DY-T1-E3 is an actively supported product with no plans for discontinuation.

Replacement or upgrade options are available from Vishay/Siliconix if needed.

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Versatile design suitable for various applications

Reliable performance over a wide temperature range

Small footprint and easy surface mount integration

Backed by Vishay/Siliconix's reputation for quality and reliability