Manufacturer Part Number
SI4932DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Dual N-channel MOSFET transistor with high performance and reliability
Product Features and Performance
2 N-Channel MOSFET in a single package
Designed for high-speed, high-efficiency switching applications
Low on-resistance for minimal power loss
Fast switching speed
High voltage rating up to 30V
High continuous drain current up to 8A
Low input capacitance for efficient switching
Logic level gate drive
Product Advantages
Compact and space-saving dual MOSFET design
Improved efficiency and thermal performance
Reliable operation in harsh environments
Suitable for a wide range of power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 15mΩ @ 7A, 10V
Drain Current (Id): 8A continuous @ 25°C
Input Capacitance (Ciss): 1750pF @ 15V
Gate Charge (Qg): 48nC @ 10V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Suitable for industrial and consumer applications
Compatibility
Compatible with various power supply, motor control, and power conversion circuits
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Lighting control
Industrial automation
Consumer electronics
Product Lifecycle
Currently in active production
Replacement and upgrade options available for future needs
Key Reasons to Choose This Product
High efficiency and low power loss
Compact dual MOSFET design for space savings
Reliable operation in harsh environments
Wide temperature range and RoHS compliance
Suitable for a variety of power conversion applications
SI4936ADY-T1-E3.Electro-Films (EFI) / Vishay
SI4936ADYSI