Manufacturer Part Number
SI4931DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Dual P-Channel MOSFET with low on-resistance and logic-level gate
Product Features and Performance
Trench MOSFET technology
Low on-resistance of 18 mOhm
High continuous drain current of 6.7A
Wide temperature range of -55°C to 150°C
Low gate charge of 52 nC
Product Advantages
Excellent power efficiency
High power density
Reliable operation across wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 12V
On-Resistance (Rds(on)): 18 mOhm
Continuous Drain Current (Id): 6.7A
Gate Threshold Voltage (Vgs(th)): 1V
Gate Charge (Qg): 52 nC
Power Dissipation: 1.1W
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Surface mount package (8-SOIC)
Compatible with standard MOSFET drivers and controllers
Application Areas
Power management
Motor control
Embedded systems
Industrial electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade parts available if needed
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Reliable operation across wide temperature range
Easy to integrate into various applications
High level of quality and safety assurance
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