Manufacturer Part Number
SI4904DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Dual N-Channel TrenchFET Power MOSFET
Product Features and Performance
High power density and efficiency
Fast switching speed
Low on-resistance
Wide operating temperature range
Product Advantages
Excellent reliability and stability
Compact and space-saving design
Suitable for high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 16mΩ @ 5A, 10V
Continuous Drain Current (Id): 8A @ 25°C
Input Capacitance (Ciss): 2390pF @ 20V
Gate Threshold Voltage (Vgs(th)): 2V @ 250μA
Gate Charge (Qg): 85nC @ 10V
Quality and Safety Features
Complies with RoHS3 directive
Suitable for high-temperature operation (-55°C to 150°C)
Reliable and robust design
Compatibility
Surface mount package (8-SOIC)
Compatible with various power electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial controls
Product Lifecycle
This product is currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High power efficiency and performance
Compact and space-saving design
Excellent reliability and stability
Wide operating temperature range
Suitable for a variety of high-power applications
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