SI4909DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4909DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

MOSFET (Metal Oxide) Technology

2 P-Channel (Dual) Configuration

Logic Level Gate FET Feature

Drain to Source Voltage (Vdss): 40V

Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V

Current Continuous Drain (Id) @ 25°C: 8A

Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V

Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 3.2W

Product Advantages

Logic Level Gate for easy driving

Low on-resistance for efficient power handling

Dual configuration for space-saving designs

Key Technical Parameters

Drain to Source Voltage (Vdss): 40V

Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V

Current Continuous Drain (Id) @ 25°C: 8A

Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V

Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

8-SOIC (0.154", 3.90mm Width) Package

Tape & Reel (TR) Packaging

Application Areas

Power management

Motor control

Switching circuits

General purpose amplification

Product Lifecycle

Currently available

No known plans for discontinuation

Upgrades and replacements may be available in the future

Key Reasons to Choose This Product

Logic Level Gate for easy driving

Low on-resistance for efficient power handling

Dual configuration for space-saving designs

RoHS3 Compliant for environmental compatibility

Wide operating temperature range of -55°C to 150°C

High current capability of 8A continuous drain current