Manufacturer Part Number
SI4904DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI4904DY-T1-E3 is a dual N-channel MOSFET transistor from Vishay/Siliconix. It is part of the TrenchFET series and designed for a wide range of power management and switching applications.
Product Features and Performance
Dual N-channel MOSFET configuration
40V drain-to-source voltage
16mΩ maximum on-resistance at 5A, 10V
8A continuous drain current at 25°C
2390pF maximum input capacitance at 20V
85nC maximum gate charge at 10V
Operating temperature range of -55°C to 150°C
Product Advantages
High performance and efficiency
Compact 8-SOIC surface mount package
Suitable for a wide range of power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 16mΩ @ 5A, 10V
Continuous Drain Current (Id): 8A @ 25°C
Input Capacitance (Ciss): 2390pF @ 20V
Gate Charge (Qg): 85nC @ 10V
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
The SI4904DY-T1-E3 is compatible with a wide range of power management and switching applications.
Application Areas
Power management circuits
Switching power supplies
Motor control
Battery charging and discharging
Industrial and automotive electronics
Product Lifecycle
The SI4904DY-T1-E3 is an active product and there are no known plans for discontinuation. Replacement or upgrade options may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
High performance and efficiency
Compact surface mount package
Wide operating temperature range
Suitable for a variety of power management and switching applications
RoHS3 compliant and available in tape and reel packaging