Manufacturer Part Number
SI4896DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
80V Drain-to-Source Voltage
5mΩ Maximum On-Resistance
7A Maximum Continuous Drain Current
Fast Switching Speed
Wide Operating Temperature Range (-55°C to 150°C)
Low Gate Charge of 41nC at 10V
Suitable for High-Frequency, High-Efficiency Power Conversion Applications
Product Advantages
Excellent Power Efficiency
Reliable and Robust Design
High Current Handling Capability
Wide Operating Temperature Range
Compact Surface Mount Package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 16.5mΩ @ 10A, 10V
Continuous Drain Current (Id): 6.7A @ 25°C
Power Dissipation (Pd): 1.56W @ 25°C
Gate Threshold Voltage (Vgs(th)): 2V @ 250µA (Min)
Gate Charge (Qg): 41nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Reliable MOSFET Design
Stringent Quality Control
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching Power Supplies
DC-DC Converters
Motor Drives
Inverters
Industrial Controls
Product Lifecycle
Current product offering
No plans for discontinuation
Upgrades and replacements available as needed
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design
Wide operating temperature range
Fast switching speed
Low gate charge for high-frequency, high-efficiency applications
Compact surface mount package for space-constrained designs
SI4894DY-T1VISHAT
SI4901-B-GLSilicon Power