Manufacturer Part Number
SI4894BDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single
Product Features and Performance
N-Channel MOSFET
30V Drain to Source Voltage
±20V Gate to Source Voltage
11mOhm On-Resistance @ 12A, 10V
9A Continuous Drain Current @ 25°C
1580pF Input Capacitance @ 15V
4W Power Dissipation
3V Gate Threshold Voltage @ 250uA
5V to 10V Gate Drive Voltage Range
38nC Gate Charge @ 10V
Product Advantages
High performance N-Channel MOSFET
Low on-resistance
High current capability
Wide temperature range
Key Technical Parameters
Vdss: 30V
Vgs(Max): ±20V
Rds(on) @ Id, Vgs: 11mOhm @ 12A, 10V
Id @ 25°C: 8.9A
Ciss @ Vds: 1580pF @ 15V
Pd (Max): 1.4W
Vgs(th) @ Id: 3V @ 250uA
Qg @ Vgs: 38nC @ 10V
Quality and Safety Features
RoHS3 Compliant
8-SOIC Package
Compatibility
Surface Mount
Tape & Reel Packaging
Application Areas
Power management
Motor control
Switching regulator
Amplifier
General purpose switching
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose
High performance N-Channel MOSFET
Low on-resistance for high efficiency
High current capability
Wide temperature range for diverse applications
RoHS compliance for environmental friendliness
Surface mount and tape & reel packaging for flexible integration