Manufacturer Part Number
SI4896DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET Technology
Low On-Resistance
Fast Switching Speed
High Power Handling Capability
Wide Operating Temperature Range (-55°C ~ 150°C)
Product Advantages
Efficient Power Conversion
Improved Energy Efficiency
Reliable Performance
Compact Surface Mount Package
Key Technical Parameters
Drain to Source Voltage (Vdss): 80 V
Gate-Source Voltage (Vgs Max): ±20V
On-Resistance (Rds On Max): 16.5 mΩ @ 10 A, 10 V
Continuous Drain Current (Id): 6.7 A @ 25°C
Power Dissipation (Max): 1.56 W
Gate Charge (Qg Max): 41 nC @ 10 V
Quality and Safety Features
RoHS3 Compliant
Reliable Trench MOSFET Technology
Compatibility
Suitable for Surface Mount Applications
Application Areas
Power Conversion Circuits
Motor Drives
Switching Power Supplies
Industrial Electronics
Automotive Electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact and reliable surface mount package
Wide operating temperature range
Efficient power conversion for various applications
Proven Trench MOSFET technology for reliable operation