Manufacturer Part Number
SI4840BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
This product is a single N-channel MOSFET transistor from the TrenchFET series by Vishay/Siliconix.
Product Features and Performance
40V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
9mOhm maximum On-Resistance (Rds(on)) at 12.4A and 10V
19A maximum Continuous Drain Current (Id) at 25°C
2000pF maximum Input Capacitance (Ciss) at 20V
5W Power Dissipation at 25°C, 6W at the maximum case temperature
Product Advantages
Low On-Resistance for high efficiency
High current handling capability
Fast switching speed
Reliable Trench MOSFET technology
Key Technical Parameters
MOSFET technology
N-channel
8-SOIC package
Tape & Reel (TR) package
Quality and Safety Features
RoHS3 compliant
Operating temperature range of -55°C to 150°C
Compatibility
This MOSFET is a direct replacement for a variety of applications using similar N-channel MOSFET transistors.
Application Areas
Power management
Switching circuits
Motor control
Industrial and consumer electronics
Product Lifecycle
The SI4840BDY-T1-E3 is an active product and there are no indications of it being near discontinuation. Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
High performance and efficiency with low on-resistance
Robust design for reliable operation across a wide temperature range
Compatibility with a variety of applications
Availability in a common surface-mount package