SI4840BDY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4840BDY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI4840BDY-T1-GE3 is a high-performance, N-channel MOSFET transistor from Vishay Siliconix's TrenchFET series.

Product Features and Performance

40V drain-to-source voltage rating

Low on-resistance of 9mΩ @ 12.4A, 10V

Continuous drain current of 19A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching speed and low gate charge of 50nC @ 10V

Optimized for efficient power conversion applications

Product Advantages

Excellent power handling and efficiency

Robust and reliable performance

Compact 8-SOIC surface mount package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 40V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 9mΩ @ 12.4A, 10V

Continuous Drain Current (Id): 19A @ 25°C

Input Capacitance (Ciss): 2000pF @ 20V

Power Dissipation: 2.5W (Ta), 6W (Tc)

Quality and Safety Features

RoHS3 compliant

Suitable for harsh environments with -55°C to 150°C operating temperature range

Compatibility

Designed for efficient power conversion and control applications

Application Areas

Switching power supplies

DC-DC converters

Motor drives

Industrial and automotive electronics

Product Lifecycle

The SI4840BDY-T1-GE3 is an active and available product from Vishay Siliconix.

Replacement or upgrade options may be available from Vishay or other manufacturers.

Key Reasons to Choose This Product

High performance and efficiency due to low on-resistance and fast switching

Robust and reliable operation across a wide temperature range

Compact and easy to integrate 8-SOIC surface mount package

Widespread compatibility and suitability for various power conversion applications