Manufacturer Part Number
SI4838BDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in a small 8-SOIC package
Product Features and Performance
Low on-resistance (RDS(on) = 2.7 mΩ max. at 15 A, 4.5 V)
High current capability (ID = 34 A at 25°C)
Low gate charge (Qg = 84 nC max. at 4.5 V)
Wide operating temperature range (-55°C to 150°C)
Trench technology for low RDS(on)
Suitable for high-frequency, high-efficiency switching applications
Product Advantages
Excellent thermal performance
Compact package size
Low gate charge for efficient switching
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (VDS): 12 V
Gate to Source Voltage (VGS): ±8 V
Continuous Drain Current (ID): 34 A at 25°C
On-Resistance (RDS(on)): 2.7 mΩ max. at 15 A, 4.5 V
Input Capacitance (Ciss): 5760 pF max. at 6 V
Power Dissipation (PD): 2.5 W at TA, 5.7 W at TC
Quality and Safety Features
RoHS3 compliant
Reliable trench MOSFET technology
Compatibility
This device is compatible with a wide range of high-frequency, high-efficiency switching applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
General power management applications
Product Lifecycle
This product is currently in production and available for purchase. There are no plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
Excellent thermal performance and high current capability for efficient power handling
Low on-resistance and gate charge for fast, efficient switching
Compact 8-SOIC package for space-constrained designs
Wide operating temperature range for versatile applications
Reliable trench MOSFET technology for long-term durability