SI4835DDY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4835DDY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

P-Channel MOSFET transistor with high performance and reliability.

Product Features and Performance

Operates in the temperature range of -55°C to 150°C

Low on-resistance of 18mOhm @ 10A, 10V

High current capacity of 13A continuous drain current

Low input capacitance of 1960pF @ 15V

Low gate charge of 65nC @ 10V

Wide gate voltage range of ±25V

Product Advantages

Excellent thermal performance and power handling

Fast switching speed

High reliability and robustness

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs Max): ±25V

On-Resistance (Rds(on) Max): 18mOhm @ 10A, 10V

Continuous Drain Current (Id): 13A

Input Capacitance (Ciss Max): 1960pF @ 15V

Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging

Compatibility

Surface mount package (8-SOIC)

Application Areas

Power management circuits

Motor control

Automotive electronics

Industrial equipment

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgrade options are available from Vishay/Siliconix.

Key Reasons to Choose This Product

Excellent thermal performance and power handling

Fast switching speed for efficient power conversion

High reliability and robustness for demanding applications

Wide operating temperature range of -55°C to 150°C

Competitive pricing and availability through Vishay/Siliconix distribution.