SI4835DDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4835DDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

The SI4835DDY-T1-E3 is a P-channel MOSFET transistor from Vishay Siliconix's TrenchFET series. It is designed for use in a wide range of applications.

Product Features and Performance

P-channel MOSFET transistor

Trench technology

High current capacity of 13A at 25°C

Low on-resistance of 18mOhm at 10A, 10V

Wide operating temperature range of -55°C to 150°C

High input capacitance of 1960pF at 15V

Maximum power dissipation of 2.5W at 25°C, 5.6W at case temperature

Product Advantages

High efficiency and low power loss

Compact surface mount package

Reliable performance in harsh environments

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): ±25V

Threshold Voltage (Vgs(th)): 3V at 250A

Drive Voltage (Rds On Max, Rds On Min): 4.5V, 10V

Gate Charge (Qg): 65nC at 10V

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging

Compatibility

This MOSFET is compatible with a wide range of electronic circuits and applications.

Application Areas

Power supplies

Motor drives

Audio amplifiers

Switching circuits

General purpose power management

Product Lifecycle

The SI4835DDY-T1-E3 is an active product and is still in production. Replacement or upgrade options may be available from Vishay Siliconix.

Key Reasons to Choose This Product

High current handling capability

Low on-resistance for improved efficiency

Wide operating temperature range

Compact surface mount package

Reliable performance in demanding applications