Manufacturer Part Number
SI4835BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
Trench FET Technology
Wide operating temperature range (-55°C to 150°C)
Low on-resistance (18 mOhm max @ 9.6A, 10V)
High current capacity (7.4A continuous at 25°C)
Low gate charge (37 nC max @ 5V)
Product Advantages
Efficient power switching
Compact surface mount package
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±25V
Power Dissipation (Max): 1.5W
Gate Threshold Voltage (Vgs(th)): 3V max @ 250A
Quality and Safety Features
RoHS3 compliant
8-SOIC (0.154", 3.90mm Width) package
Compatibility
Suitable for surface mount applications
Application Areas
Power supplies
Motor drives
Switching circuits
Audio amplifiers
Battery management systems
Product Lifecycle
Current product offering
Replacements and upgrades may be available
Key Reasons to Choose
Efficient power switching performance
Wide operating temperature range
Compact surface mount package
Suitable for high-power, high-frequency applications
RoHS3 compliance for environmental responsibility