SI4412ADY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4412ADY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

Trench MOSFET technology

Low on-resistance

High current capability

Wide operating temperature range

Low gate charge

Suitable for high-frequency switching applications

Product Advantages

Efficient power conversion

High reliability

Compact design

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 24 mΩ @ 8 A, 10 V

Continuous Drain Current (Id): 5.8 A @ 25°C

Power Dissipation (Pd): 1.3 W

Threshold Voltage (Vgs(th)): 1 V @ 250 µA (min)

Gate Charge (Qg): 20 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Suitable for high-frequency, high-power applications

Compatibility

Surface mount package (8-SOIC)

Tape and reel packaging

Application Areas

Switch-mode power supplies

Motor drives

Battery chargers

Telecommunication equipment

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose This Product

Efficient power conversion with low on-resistance

High reliability and rugged design

Suitable for high-frequency, high-power applications

Wide operating temperature range

Compact surface mount package